Advanced Epi's core focus is silicon carbide (SiC) heteroepitaxy. Using our unique patented technology, we are able to grow thin films of cubic silicon carbide (3C-SiC) on standard silicon substrates using traditional RP-CVD growth systems found within the silicon industry. Not only can we offer 3C-SiC/Si at low cost but the process can be fully integrated into current foundries and be scaled up to high volumes and wafer sizes.
The material is suitable for a range of applications:
Advanced Epi's process is compatible with industry standard Si growth technology and can be seamlessly integrated with other group IV semiconductor materials and alloys such as Si, Ge, GeSn, SiB...
We are happy to supply small quantities of wafers for evaluation purposes as well as larger batches for high volume production. We offer a range of standard epi wafers which can be found here, however, we are also happy to work towards your exact material specifications.
Advanced Epi is a UK based semiconductor company specialising in epitaxial growth, material characterisation and novel device fabrication. We are able to supply a range of group IV semiconductor materials and work closely with customers to provide them with material to suit their needs.