Group IV Epi wafers
Advanced Epi can also supply a range of group IV based semiconductors and alloys including:
Epilayers can be grown on substrate sizes including 100, 150 and in certain cases 200 mm and doping profiles can be varied across many of the structures.
For more information on the materials available and their properties please contact us.
For more information on material properties or to request a quotation please contact us.
3C-SiC Epi wafers
Advanced Epi offers cubic silicon carbide (3C-SiC) epilayer grown on several different silicon substrates for various applications. Unless otherwise requested, epi wafers are packaged under cleanroom conditions without any additional characterisation techniques.
If requested, Advanced Epi offers a number of non-destructive and destructive characterisation processes including: FTIR thickness mapping, wafer bow measurements, AFM surface roughness mapping, 4-point probe resistance mapping, HR-XRD, SEM and TEM.
Substrates can be requested with the following parameters or in certain cases non-standard substrates can be supplied from customers:
3C-SiC epilayers can be grown at various thickness, typically between 50 - 1000 nm and be unintentionally doped or n-type doped. Advanced Epi's standard epi wafers are are 300 nm undoped 3C-SiC.
Typical 150mm 3C-SiC/Si Specifications
The following table shows the limits and typical parameters for 3C-SiC/Si epi wafer specifications grown on standard 675 micron thick 150 mm diameter Si substrates.
Advanced Epi can supply customers with prototype 3C-SiC membranes for evaluation purposes. Membranes can be fabricated from 3C-SiC epilayers as thin as 25nm and above. Membranes sizes can range from hundreds of microns up to several millimetres.
We are working closely semiconductor membranes manufacturers in order to offer these products on a fully commercial basis.
For more information regarding 3C-SiC membranes, pleasecontact us.