​Advanced Epi is a University of Warwick spin-out company, with patented technology that allows the low temperature epitaxial growth of cubic silicon carbide (3C-SiC) on standard silicon wafers, at very low cost and without any wafer distortions.

The material is suitable for a range of applications:

  • Sensors for harsh environments (high temperature, thermal shocks, vibrations, corrosive and toxic, high levels of radiation...)
  • Virtual substrates for the growth of gallium nitride and graphene
  • Biomedical devices and coatings
  • Power electronics
  • Thermal Management for existing silicon and compound semiconductor based devices

Advanced Epi's process is compatible with industry standard Si growth technology and can be seamlessly integrated with other group IV semiconductor materials and alloys such as Si, Ge, GeSn...

We are happy to supply small pieces / single wafers for evaluation purposes or larger batches for larger volume device fabrication and can work to your exact material specifications.

Advanced Epi's mission is to revolutionise the compound semiconductor industry by growing and supplying silicon carbide based materials and devices that are tough, cost effective and designed to work in challenging places.